Anvo-Systems Dresden GmbH

Anvo-Systems Dresden GmbH
Zur Wetterwarte 50
Haus 337 / B
01109 Dresden
Germany

Tel: +49 351 795890-257
Tel: +49 351 795890
Fax: +49 351 795890 - 11

Company Profile

Anvo-Systems Dresden 

Anvo-Systems Dresden GmbH located in Dresden was founded 2009 as fabless semiconductor company and provides non-volatile standard products, IP and services to the market. Core competencies include nvSRAM, FLASH, SRAM, and DRAM technologies. The fast, highly reliable, system solutions are designed for industrial, computational, medical, energy, automotive and communication applications. 

Anvo-Systems Dresden has signed strategic cooperation agreements with X-FAB Semiconductor Foundries AG and Melexis N.V. The company is a member of the Semiconductor Cluster Silicon Saxony. 

 

Anvo-Systems Dresden Technology

Anvo-Systems' low power, low voltage technology, with just 1.5 … 1.8V core voltage, allows minimum feature sizes for volatile and non-volatile circuits. The low power standard baseline technology is enhanced by a SONOS-3 transistor module. This module uses a Fowler/Nordheim tunneling mechanism to ensure the lowest power consumption and enables massive parallel operation. This module also scales with technology node in voltage and feature size.

Furthermore, our technology provides

  • high reliability @ lowest read current and voltages / fields
  • high density of memory cells
  • flexible integration of different memory architectures for non-volatile subsystems

 

Anvo-Systems Dresden non-volatile SRAM

Non-volatile SRAMs from Anvo-Systems Dresden combine two proven technologies (CMOS-SRAM and SONOS non-volatile memory) into a new technology that is greater than the sum of its parts – creating an outstanding new product family of fast, reliable and energy efficient memories.

Based on standard parallel or serial SPI SRAM pinning, with unrestricted internal SRAM functionality, both fast reads and writes can be executed with the same high speed. In fact, the devices can be operated as standard SRAM. However, this SRAM comes with built in data protection.

The highly parallel internal architecture, and our extremely energy efficient STORE mechanism enables the device to transfer the whole SRAM data to/from the non-volatile array in just one single step operation (8ms STORE / 10μs RECALL). Since there is no wear out mechanism for write access the number of write cycles is unlimited and continuous write is possible.

Besides non-volatile instruction controlled operation inside the normal operation voltage range, the nvSRAM can execute a store operation on a power drop or at power down as well. The energy needed for this operation comes from a small capacitor. Our future range of products will feature this capacitor integrated into the package. This extreme energy efficiency increases product reliability as well as enables new applications for our customers.

There is a comprehensive set of mechanisms for monitoring safe volatile and non-volatile data transfer.