Anvo-Systems Dresden GmbH, the specialist for non-volatile memory products, presents the ANV32A62ASE1 serial nvSRAM (non-volatile SRAM) with I²C interface for the extended temperature range of -40°C to +105°C. With the immediately available, non-volatile memory device, the security of a system can be significantly increased. The data retention of ten years ensures high reliability.
The ANV32A62ASE1 non-volatile memory device from Anvo-Systems Dresden features a storage capacity of 64Kb and a clock rate of 1MHz. The low power consumption is 0.5mA typically.
The ANV32A62ASE1 serial I²C nvSRAM is internally organized as 8k words of 8 bits. Each SRAM memory cell integrates a non-volatile SONOS storage element. In the event of an unforeseeable operating voltage drop, the SONOS technology enables storage of all data in one operation. If the operating voltage drops below a defined value, the data are stored in non-volatile memory cells in automatic self-timed PowerStore operation. The serial nvSRAM feature short access and cycle times and unlimited read & write endurance of the SRAM cells comparable to standard SRAMs. Special functions such as Hardware Data Protection and Continuous Write Operation ensure a high degree of reliability and efficiency of the product.
Anvo-Systems Dresden delivers the ANV32A62ASE1 device in a compact, RoHS compliant 8 pin 150 mil SOIC package The serial nvSRAM can be operated with 3.3V.
The non-volatile memory device from Anvo-Systems Dresden is suitable for innovative applications demanding extended temperature ranges, like industrial automation, robotics, IoT based systems, servers, measurement equipment, medical devices, building automation, and smart metering systems.
