Infineon has introduced a new silicon carbide power module – EasyPACK CoolSiC Automotive MOSFET – for electric vehicles, based on its silicon carbide trench MOSFET structure. Compared to planar structures, the trench structure enables a higher cell density, resulting in the best-in-class figure of merit. As a result, trench MOSFETs can be operated at lower gate-oxide field strengths for higher reliability.

Silicon carbide in electric vehicles stands for more efficiency, higher power density and performance. Particularly with an 800 V battery system and a large battery capacity, silicon carbide leads to a higher efficiency in inverters and thus enables longer ranges or lower battery costs.

Infineon’s CoolSiC automotive MOSFET technology is optimised for use in traction inverters, with a focus on achieving the lowest possible conduction losses, especially under partial load conditions. Combined with the low switching losses of silicon carbide MOSFETs, this enables losses in inverter operation to be reduced by around 60 percent compared to silicon IGBTs.

The chip manufacturer develops and tests CoolSiC automotive MOSFETs with the aim of achieving high short-circuit, cosmic ray, and gate-oxide robustness, which is key for designing efficient and reliable high-voltage applications in electric cars.

The new CoolSiC automotive MOSFET power module is fully qualified to the AQG324 standard.

Mass production of the EasyPACK CoolSiC Automotive MOSFET module FF08MR12W1MA1_B11A has already started, to be available at distributors in September 2020.